70HF(R)
2). Forward Conduction
Parameters
I
F(AV)
Max. average forward current
@ Case temperature
70HF(R)
10 to 120
70
140
110
1200
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
1250
1000
1050
7100
I
2
t
Maximum I
2
t for fusing
6450
5000
4550
I
√
t
V
F(TO)
V
F(TO)
r
f
r
f
V
FM
T
J
T
stg
R
thJC
R
thCS
2
140 to 160
70
110
Unit
A
℃
Conditions
180
°
conduction, half sine wave
I
F(RMS)
Max. RMS forward current
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
A
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
A
√
s
V
m
Ω
1.46
V
℃
K/W
Nm
lbf · in
Nm
lbf · in
g (oz)
2
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% VR
RM
reapplied
Sinusoidal half
wave, Initial
T
J
= T
J
max.
Maximum I
√
t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
1.30
2
71000
0.79
1.00
2.33
1.53
t = 0.1 to 10ms, no voltage reapplied
T
J
= T
J
max.
T
J
= T
J
max
.
I
pk
= 125A, T
J
= 25
℃
, t
p
= 400
μ
s
rectangular wave
-65 to 180
-65 to 150
0.45
0.25
3.4
+0-10%
30
2.3
+0-10%
20
17 (0.6)
DO-5
DC operation
Mounting surface, smooth, flat and greased
Lubricated threads
Not lubricated threads
unleaded device
See Outline Table
T
Max. allowed mounting torque
±
10%
wt
Approximate weight
Case style
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
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Sinusoidal conduction
0.08
0.10
0.13
0.19
0.30
Rectangular conduction
0.06
0.11
0.14
0.20
0.30
Units
Conditions
K/W
T
J
= T
J
max.
2/5
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