25RIA
2). Forward Conduction
Parameters
Max. average forward current
@ Case temperature
25RIA
10 to 120 140 to 160
25
85
40
420
I
TSM
Max. peak, one-cycle forward,
non-repetitive surge current
440
350
370
867
I
2
t
Maximum I
2
t for fusing
790
615
560
I
2
√
t
Maximum I
2
√
t for fusing
8670
0.99
1.40
10.1
5.7
1.71
-
130
200
25
85
40
398
415
335
350
795
725
560
510
7950
0.99
1.15
11.73
10.05
-
180
A
2
√
s
V
A
2
s
A
Unit
A
℃
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half
wave, Initial
T
J
= T
J
max.
Conditions
I
T(AV)
180
°
conduction, half sine wave
I
T(RMS)
Max. RMS forward current
t = 0.1 to 10ms, no voltage reapplied
(16.7%x
π
x I
F(AV)
<I<
π
x I
F(AV)
), T
J
=T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
<I<
π
xI
F(AV)
), T
J
=T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 50A, T
J
= 25
℃
t
p
= 10ms sine pulse
T
J
= 25
°
C, anode supply 12V
resistive load
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Maximum holding current
Typical latching current
Max. rate of rise of turned-on current
VDRM ≤ 600V
di/dt
VDRM ≤ 800V
VDRM ≤ 1000V
VDRM ≤ 1600V
t
gt
t
rr
Typical turn-on time
Typical reverse recovery time
m
Ω
V
mA
200
180
160
150
0.9
4
μ
s
A/
μ
s
T
J
= T
J
max., V
DM
= rated V
DRM
Gate pulse = 20V, 15
Ω
, t
p
= 6
μ
s,
tr = 0.1
μ
s max. I
TM
= (2x rated di/dt) A
T
J
=25
℃
, at = rated V
DRM
/V
RRM
, T
J
=125
℃
T
J
=T
J
max., I
TM
=I
T(AV)
, t
p
>200
μ
s, di/dt = -10A/
μ
s
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200
μ
s,
V
R
= 100V, di/dt = -10A/
μ
s, dv/dt = 20V/
μ
s
linear to 67% V
DRM
, gate bias 0V-100W
t
q
Typical turn-off time
110
dv/dt
Max. critical rate of rise of
off-state voltage
100
300 (*)
V/
μ
s
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(*) t
q
= 10
μ
sup to 600V, t
q
= 30
μ
s up to 1600V available on special request.
(**) Available with: dv/dt = 1000V/
μ
s, to complete code add S90 i.e. 25RIA120S90.
www.china-liujing.com
2/7
LIUJING [ 上海柳晶电子电器有限公司 ]
