16RIA
3). Triggering
Parameters
P
GM
Maximum peak gate power
16RIA
8.0
2.0
1.5
10
90
I
GT
DC gate current required to trigger
60
35
3.0
V
GT
DC gate voltage required to trigger
2.0
1.0
I
GD
DC gate current not to trigger
2.0
V
V
mA
mA
Unit
W
A
V
Conditions
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= - 65
℃
T
J
= 25
℃
T
J
= 125
℃
T
J
= - 65
℃
T
J
= 25
℃
T
J
= 125
℃
T
J
= T
J
max., V
DRM
= rated value
T
J
= T
J
max.
V
DRM
= rated value
Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V
DRM
anode-to-cathode applied
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
P
G(AV)
Maximum average gate power
I
GM
-V
GM
Max. peak positive gate current
Maximum peak negative gate voltage
V
GD
DC gate voltage not to trigger
0.2
V
T
J
T
stg
R
thJC
R
thCS
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
- 65 to 125
- 65 to 125
0.86
0.35
to nut
to device
25
0.29
2.8
℃
℃
K/W
K/W
DC operation
Mounting surface, smooth, flat and greased
T
Mounting torque
20(27.5)
0.23(0.32)
2.3(3.1)
lbf-in
kgf.m
Nm
g (oz)
Lubricated threads
(Non-lubricated threads)
wt
Approximate weight
Case style
14 (0.49)
TO-48
See Outline Table
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
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Sinusoidal conduction
0.21
0.25
0.31
0.45
0.76
Rectangular conduction
0.15
0.25
0.34
0.47
0.76
Units
Conditions
K/W
T
J
= T
J
max.
3/7
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