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S8055R 参数 Datasheet PDF下载

S8055R图片预览
型号: S8055R
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅( 1 A到70 A) [SCRs (1 A to 70 A)]
分类和应用: 栅极可控硅局域网
文件页数/大小: 12 页 / 213 K
品牌: LITTELFUSE [ LITTELFUSE ]
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Data Sheets  
SCRs  
I2t  
di/dt  
IDRM & IRRM  
VTM  
(3)  
VGT  
IH  
(5) (13)  
IGM  
(12)  
PGM  
(12)  
PG(AV)  
ITSM  
(6) (10)  
tgt  
(7)  
tq  
(9) (10)  
dv/dt  
(14)  
(8)  
(17)  
mAmps  
Volts  
Volts  
Amps  
Volts/µSec  
T
=
T =  
T
=
T
=
T
=
T
=
T =  
C
C
C
C
C
C
C
2
60/50 Hz 100 °C 125 °C  
25 °C 100 °C 125 °C  
MAX  
25 °C  
MAX  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
25 °C  
MAX  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
mAmps  
MAX  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
40  
40  
40  
40  
40  
Amps  
Watts  
Watts  
Amps Sec Amps/µSec  
µSec  
TYP  
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
µSec  
MAX  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
35  
MIN  
40  
40  
MIN  
20  
20  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.02  
0.01  
0.01  
0.01  
0.01  
0.02  
0.01  
0.01  
0.01  
0.02  
0.02  
0.01  
0.01  
0.01  
0.02  
0.02  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
3
0.2  
0.2  
0.2  
0.2  
3
0.2  
0.2  
0.2  
0.5  
3
0.5  
0.5  
0.5  
0.5  
3
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
1.5  
1.5  
1.5  
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
15  
15  
15  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
0.3  
0.3  
0.3  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
30/25  
30/25  
30/25  
3.7  
3.7  
3.7  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
60  
60  
60  
60  
60  
50  
50  
50  
40  
20  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
120/100  
120/100  
120/100  
120/100  
120/100  
350  
350  
300  
250  
100  
350  
350  
300  
250  
100  
350  
350  
300  
250  
100  
350  
350  
300  
250  
100  
250  
250  
225  
200  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
0.5  
0.5  
0.5  
0.5  
250  
250  
225  
200  
0.5  
0.5  
0.5  
1
250  
250  
225  
200  
1
1
1
1
2
2
2
2
250  
250  
225  
200  
2
(11) See package outlines for lead form configuration. When ordering  
special lead forming, add type number as suffix to part number.  
(12) Pulse width 10 µs  
Electrical Specification Notes  
(1) See Figure E6.5 through Figure E6.16 for current rating at  
specified operating case temperature.  
(2) See Figure E6.1 and Figure E6.2 for free air current rating.  
(13) Initial on-state current = 200 mA dc for 1 A through 16 A devices;  
400 mA dc for 20 A through 70 A devices.  
(3) See Figure E6.19 and Figure E6.20 for instantaneous on-state  
(14) TC = TJ for test conditions in off state.  
current versus on-state voltage (typical).  
(15) The R, K, or M package rating is intended for high surge condition  
use only and not recommended for 50 A rms continuous current  
use since narrow pin lead temperature can exceed PCB solder  
melting temperature. Teccor's J package or W package is  
(4) See Figure E6.18 for IGT versus TC.  
(5) See Figure E6.17 for IH versus TC.  
(6) For more than one full cycle rating, see Figure E6.23.  
recommended for 50 A rms continuous current requirements.  
(7) See Figure E6.22 for tgt versus IGT  
.
(16) For various durations of an exponentially decaying current  
waveform, see Figure E6.3 and Figure E6.4. (tW is defined as  
5 time constants.)  
(8) See Figure E6.21 for VGT versus TC.  
(9) Test conditions are as follows:  
(17) Minimum non-trigger VGT at 125 °C is 0.2 V.  
• IT = 1 A for 1 A devices and 2 A for all other devices  
• Pulse duration = 50 µs, dv/dt = 20 V/µs, di/dt = -10 A/µs for 1 A  
devices, and -30 A/µs for other devices  
• IGT = 200 mA at turn-on  
(10) See Figure E6.5 through Figure E6.10 for maximum allowable  
case temperatures at maximum rated current.  
©2004 Littelfuse, Inc.  
Thyristor Product Catalog  
E6 - 3  
http://www.littelfuse.com  
+1 972-580-7777  
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