GaAlAs T-1
3
/
4
Standard 5
Infrared Emitting Diode
LTE-3271T/LTE-3371T/LTE-3271TL/LTE-3371TL
Features
Special for high current and low forward voltage.
High power.
Available for pulse operating.
Wide viewing angle.
LTE-3271TL/LTE-3371TL are blue transparent color
package.
Package Dimensions
Description
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are
high intensity Gallium Aluminum Arsenide infrared emit-
ting diodes mounted in plastic end looking packages.
They provide a broad range of intensity selection and
are specified under pulsed drive up to 2 Amps.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation
Peak Forward Current(300pps, 10
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
s pulse)
Maximum Rating
150
2
100
5
-40
-55
260
to +85
to +100
for 5 Seconds
Unit
mW
A
mA
V
10-14
LITEON [ LITE-ON TECHNOLOGY CORPORATION ]
