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LTC1624IS8 参数 Datasheet PDF下载

LTC1624IS8图片预览
型号: LTC1624IS8
PDF下载: 下载PDF文件 查看货源
内容描述: 高英法fi效率的SO-8 N沟道开关稳压器控制器 [High Efficiency SO-8 N-Channel Switching Regulator Controller]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器
文件页数/大小: 28 页 / 493 K
品牌: Linear [ Linear ]
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LTC1624  
U
W U U  
APPLICATIONS INFORMATION  
Boost Converters: Power MOSFET Selection  
Boost Converter: Inductor Selection  
One external N-channel power MOSFET must be selected  
for use with the LTC1624 for the switch. In boost applica-  
tions the source of the power MOSFET is grounded along  
with the SW pin. The peak-to-peak gate drive levels are set  
by the INTVCC voltage. The gate drive voltage is equal to  
approximately 5V for VIN > 5.6V and a logic level MOSFET  
can be used. At VIN voltages below 5V the gate drive  
voltage is equal to VIN – 0.6V and a sublogic level MOSFET  
should be used.  
For most applications the inductor will fall in the range of  
10µH to 100µH. Higher values reduce the input ripple  
voltage and reduce core loss. Lower inductor values are  
chosen to reduce physical size.  
Theinputcurrentoftheboostconverteriscalculatedatfull  
load current. Peak inductor current can be significantly  
higher than output current, especially with smaller induc-  
tors and lighter loads. The following formula assumes  
continuousmodeoperationandcalculatesmaximumpeak  
inductor current at minimum VIN:  
Selection criteria for the power MOSFET include the “ON”  
resistance RDS(ON), reverse transfer capacitance CRSS  
,
I  
input voltage and maximum output current. When the  
LTC1624 is operating in continuous mode the duty cycle  
for the MOSFET is given by:  
L MAX  
(
)
V
OUT  
I
=I  
+
L PEAK  
OUT MAX  
(
)
(
)
2
V
IN MIN  
(
)
V
IN  
+ V  
D
The ripple current in the inductor (IL) is typically 20% to  
30% of the peak inductor current occuring at VIN(MIN) and  
Main Switch Duty Cycle = 1−  
V
OUT  
IOUT(MAX)  
.
The MOSFET power dissipation at maximum output cur-  
rent is given by:  
V V  
+ V V  
(
)
IN OUT  
D
IN  
I  
=
L P-P  
(
)
V
2
200kHz L V  
+ V  
IN MIN  
(
)( )(  
)
OUT  
D
(
)
P
= I  
1−  
1+ δ R  
+
(
)
MAIN  
IN MAX  
(
DS ON  
)
(
)
V
+ V  
OUT  
D
with IL(MAX) = IL(P-P) at VIN = VIN(MIN)  
.
1.85  
)
Remember boost converters are not short-circuit pro-  
tected, and that under output short conditions, inductor  
current is limited only by the available current of the input  
supply, IOUT(OVERLOAD). Specify the maximum inductor  
current to safely handle the greater of IL(PEAK) or  
k V  
I
C
200kHz  
(
(
)(  
)
OUT  
IN MAX  
RSS  
(
)
V
+ V  
D
OUT  
where I  
=I  
IN MAX  
(
OUT MAX  
)
(
)
I
OUT(OVERLOAD). Make sure the inductor’s saturation cur-  
V
IN MIN  
(
)
rent rating (current when inductance begins to fall)  
exceeds the maximum current rating set by RSENSE  
.
δ is the temperature dependency of RDS(ON) and k is a  
constant inversely related to the gate drive current.  
Boost Converter: RSENSE Selection for Maximum  
Output Current  
MOSFETs have I2R losses, plus the PMAIN equation  
includes an additional term for transition losses that are  
highest at high output voltages. For VOUT < 20V the high  
currentefficiencygenerallyimproveswithlargerMOSFETs,  
while for VOUT > 20V the transition losses rapidly increase  
to the point that the use of a higher RDS(ON) device with  
lower CRSS actual provides higher efficiency. For addi-  
tional information refer to Step-Down Converter: Power  
MOSFET Selection in the Applications Information  
section.  
RSENSE is chosen based on the required output current.  
Remember the LTC1624 current comparator has a maxi-  
mum threshold of 160mV/RSENSE. The current compara-  
torthresholdsetsthepeakoftheinductorcurrent,yielding  
a maximum average output current IOUT(MAX) equal to  
IL(PEAK) less half the peak-to-peak ripple current (IL),  
divided by the output-input voltage ratio (see equation for  
IL(PEAK) .  
)
14  
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