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LLTC1142HV 参数 Datasheet PDF下载

LLTC1142HV图片预览
型号: LLTC1142HV
PDF下载: 下载PDF文件 查看货源
内容描述: 双通道高效率同步降压型开关稳压器 [Dual High Efficiency Synchronous Step-Down Switching Regulators]
分类和应用: 稳压器开关
文件页数/大小: 20 页 / 248 K
品牌: Linear [ Linear ]
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LTC1142/LTC1142L/LTC1142HV  
U
W U U  
APPLICATIO S I FOR ATIO  
eased at the expense of efficiency. If too small an inductor  
is used, the inductor current will decrease past zero and  
changepolarity.AconsequenceofthisisthattheLTC1142  
may not enter Burst Modeoperation and efficiency will be  
severely degraded at low currents.  
Theminimuminputvoltagedetermineswhetherstandard  
threshold or logic-level threshold MOSFETs must be  
used. For VIN > 8V, standard threshold MOSFETs  
(
V
< 4V) may be used. If V is expected to drop  
GS(TH) IN  
below 8V, logic-level threshold MOSFETs (V  
<
GS(TH)  
2.5V) are strongly recommended. When logic-level  
MOSFETs are used, the LTC1142 supply voltage must  
Inductor Core Selection  
be less than the absolute maximum V ratings for the  
GS  
Once the minimum value for L is known, the type of  
inductor must be selected. The highest efficiency will be  
obtained using ferrite, molypermalloy (MPP), or Kool Mµ®  
cores. Lower cost powdered iron cores provide suitable  
performance, but cut efficiency by 3% to 7%. Actual core  
loss is independent of core size for a fixed inductor value,  
but it is very dependent on inductance selected. As induc-  
tance increases, core losses go down. Unfortunately,  
increased inductance requires more turns of wire and  
therefore copper losses will increase.  
MOSFETs.  
ThemaximumoutputcurrentIMAX determinestheRDS(ON)  
requirement for the two MOSFETs. When the LTC1142 is  
operating in continuous mode, the simplifying assump-  
tion can be made that one of the two MOSFETs is always  
conducting the average load current. The duty cycles for  
the two MOSFETs are given by:  
VOUT  
V
IN  
P-Ch Duty Cycle =  
Ferrite designs have very low core loss, so design goals  
canconcentrateoncopperlossandpreventingsaturation.  
Ferrite core material saturates “hard,” which means that  
inductance collapses abruptly when the peak design cur-  
rent is exceeded. This results in an abrupt increase in  
inductor ripple current and consequent output voltage  
ripple which can cause Burst Modeoperation to be falsely  
triggered. Do not allow the core to saturate!  
V VOUT  
IN  
N-Ch Duty Cycle =  
V
IN  
From the duty cycles the required RDS(ON) for each  
MOSFET can be derived:  
V PP  
IN  
P-Ch RDS(ON)  
N-Ch RDS(ON)  
=
=
2
Kool Mµ (from Magnetics, Inc.) is a very good, low loss  
core material for toroids with a “soft” saturation charac-  
teristic. Molypermalloy is slightly more efficient at high  
(>200kHz)switchingfrequencies, butitisquiteabitmore  
expensive. Toroids are very space efficient, especially  
when you can use several layers of wire. Because they  
generally lack a bobbin, mounting is more difficult. How-  
ever, new designs for surface mount are available from  
Coiltronics and Beckman Industrial Corporation which do  
not increase the height significantly.  
VOUT IMAX 1+ δP  
(
)
V PN  
IN  
2
V VOUT IMAX 1+ δN  
(
IN  
)
(
)
where PP and PN are the allowable power dissipations and  
δP and δN are the temperature dependencies of RDS(ON)  
.
PP and PN will be determined by efficiency and/or thermal  
requirements (see Efficiency Considerations). (1 + δ) is  
generally given for a MOSFET in the form of a normalized  
RDS(ON) vs Temperature curve, but δ = 0.007/°C can be  
used as an approximation for low voltage MOSFETs.  
Power MOSFET and D1, D2 Selection  
Two external power MOSFETs must be selected for use with  
each section of the LTC1142: a P-channel MOSFET for the  
mainswitch, andanN-channelMOSFETforthesynchronous  
switch. The main selection criteria for the power MOSFETs  
The Schottky diodes D1 and D2 shown in Figure 1 only  
conduct during the dead-time between the conduction of  
the respective power MOSFETs. The sole purpose of D1  
and D2 is to prevent the body diode of the N-channel  
MOSFET from turning on and storing charge during the  
arethethresholdvoltageVGS(TH) andon-resistanceRDS(ON)  
.
Kool Mµ is a registered trademark of Magnetics, Inc.  
11