J/SST111 SERIES
SINGLE N-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
-35V
-35V
50mA
3
3
1
5pA
4ns
J SERIES
SST SERIES
SOT-23
TOP VIEW
D
1
3
-55 to 150°C
-55 to 150°C
360mW
350mW
G
S
2
Continuous Power Dissipation (SST)
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
2
TYP
J/SST111
MIN
-35
-3
-10
MAX
J/SST112
MIN
-35
-1
5
-5
MAX
J/SST113
MIN
-35
-3
2
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
mA
V
DS
= 5V, I
D
= 1µA
I
G
= 1mA, V
DS
= 0V
V
DS
= 15V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 15V, I
D
= 1.0mA
V
DS
= 5V, V
GS
= -10V
V
GS
= 0V, V
DS
= 0.1V
0.7
20
-0.005
-5
0.005
1
30
1
50
1
100
-1
-1
-1
nA
pA
nA
Ω
Linear Integrated Systems
•
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Doc 20119 06/15/13
Rev# A5 ECN#J SST 111
LINER [ LINEAR TECHNOLOGY ]
