ID100 ID101
MONOLITHIC DUAL
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101
REVERSE LEAKAGE CURRENT
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation @ TA = + 25°
Continuous Power Dissipation
Maximum Currents
Forward Current
Reverse Current
Maximum Voltages
Reverse Voltage
Diode to Diode Voltage
30V
±50V
20mA
100µA
300mW
-65 to +150 °C
-55 to +150 °C
1
I
R
= 0.1pA
BV
R
≥ 30V
C
rss
= 0.75pF
ID100
ID101
TO-78
TOP VIEW
TO-71
TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
R
V
F
I
R
|I
R1
-I
R2
|
C
rss
CHARACTERISTIC
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Differential Leakage Current
Total Reverse Capacitance
2
MIN
30
0.8
TYP
MAX
1.1
UNITS
V
CONDITIONS
I
R
= 1µA
I
F
= 10mA
V
R
= 1V
0.1
2.0
0.75
10
3
1
pF
pA
V
R
= 10V
V
R
= 10V,
f
= 1MHz
Figure 1. Operational Amplifier Protection
Input Differential Voltage limited to 0.8V (typ) by Diodes ID100 D
1
and D
2
.
Common Mode Input voltage limited by Diodes ID100 D
3
and D
4
to ±15V.
Figure 2. Sample and Hold Circuit
Typical Sample and Hold circuit with clipping. ID100 diodes reduce offset
voltages fed capacitively from the ID100 switch gate.
FIGURE 1
FIGURE 2
Linear Integrated Systems
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Doc 20117 6/15/2013 Rev#A3 ECN# ID100 ID101
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