DPAD SERIES
MONOLITHIC DUAL
PICO AMPERE DIODES
FEATURES
Direct Replacement For SILICONIX DPAD SERIES
HIGH ON ISOLATION
EXCELLENT CAPACITANCE MATCHING
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (DPAD)
Maximum Currents
Forward Current (DPAD)
50mA
3
1
20fA
ΔC
R
≤0.2pF
DPAD
TO-72
Top View
DPAD1
TO-78
Top View
Case & Substrate
-55ºC to +150°C
-55ºC to +150°C
500mW
SSTDPAD
SOIC
* Case and Pin 4 must be floating on
all TO-78 case devices
COMMON ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise stated)
SYMBOL
BV
R
V
F
│C
R1
- C
R2
│
C
rss
CHARACTERISTIC
DPAD1
Reverse Breakdown
Voltage
Forward Voltage
Differential Capacitance
(ΔC
R
)
DPAD1
ALL OTHERS
DPAD1
Total Reverse Capacitance DPAD2,5,10,20,50,100
SSTDPAD5,50,100
DPAD2,5,10,20,50,100
SSTDPAD5,50,100
MIN. TYP. MAX. UNITS
-45
-45
-30
0.8
1.5
0.2
0.5
0.8
2.0
4.0
pF
V
R
= -5V,
f=1MHz
V
I
R
= -1µA
I
F
= 1mA
V
R1
= V
R2
= -5V,
f=1MHz
CONDITIONS
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise stated)
SYMBOL
CHARACTERISTIC
(SST)DPAD1
(SST)DPAD2
(SST)DPAD5
I
R
Maximum Reverse
2
Leakage Current
(SST)DPAD10
(SST)DPAD20
(SST)DPAD50
(SST)DPAD100
DPAD
-1
-2
-5
-10
-20
-50
-100
-50
-100
-5
pA
V
R
= -20V
2
SSTDPAD
2
UNITS
CONDITIONS
Linear Integrated Systems
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Doc 201145 5/16/2013 Rev#A4 ECN# DPAD Series
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