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C3216X5R0J226MT 参数 Datasheet PDF下载

C3216X5R0J226MT图片预览
型号: C3216X5R0J226MT
PDF下载: 下载PDF文件 查看货源
内容描述: 38V , 10A DC / DC稳压器μModule高级输入和负载保护 [38V, 10A DC/DC μModule Regulator with Advanced Input and Load Protection]
分类和应用: 稳压器电容器
文件页数/大小: 64 页 / 822 K
品牌: Linear [ Linear ]
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LTM4641  
APPLICATIONS INFORMATION—POWER SUPPLY FEATURES  
where:  
Table 1. Endorsed RfSET Resistor Value vs Output Voltage for  
Non-Tracking Applications—and Resulting Full-Load Switching  
Frequency (cf. Figure 45, Figure 46, Figure 47, and Figure 51  
Circuits)  
•ꢀ V  
is nominal output voltage in volts.  
OUT  
•ꢀ t  
is the minimum length of time M  
can  
OFF(MIN)  
BOT  
R
fSET  
(ꢁΩ) (Nearest  
be on, after M  
turns off. For a conservative de-  
TOP  
V
(V)  
EIA-Standard Values)  
f
(kHz)  
SW  
OUT(NOꢁ)  
sign, use a value of 300ns, taken from the Electrical  
Characteristics Table.  
0.6  
0.787  
175  
0.7  
0.8  
0.9  
1.0  
1.2  
1.5  
1.8  
2.0  
2.5  
0.825  
200  
215  
235  
255  
285  
315  
325  
330  
335  
0.887  
•ꢀ t is the on-time of the power control MOSFET,  
ON  
0.931  
M
, as programmed by the current flowing into  
ON  
TOP  
1.00  
the I pin of LTM4641’s internal control IC.  
1.13  
•ꢀ R is the series resistance of the module’s power  
PS  
1.43  
stage, from V to V . For V ≥ 6V, this is less  
INH  
OUT  
IN  
2.00  
than 50mΩ, even at extreme temperatures (T ≈  
J
2.55  
125°C). For V < 6V, the effective series resistance  
IN  
5.76  
increases due to drop in INTV voltage and cor-  
CC  
Greater Than 3.0  
∞ (Not Used)  
∞ (Not Used)  
∞ (Not Used)  
∞ (Not Used)  
See Figure 2  
360  
responding decreased gate-drive enhancement of  
3.3  
5.0  
6.0  
M
. Printed circuit board (PCB) and/or cable  
TOP  
550  
resistancepresentinthecopperplanesand/orwires  
that physically connect the output of the module to  
660  
the load adds to R ’s effective value.  
PS  
In rail-tracking applications, it is recommended to use the  
value corresponding to the lowest voltage needed  
•ꢀ I  
is the load current on V  
in amperes.  
R
fSET  
OUT  
OUT  
to be regulated during output voltage ramp down. For  
example: to ramp V down to 0.5V requires R to be  
For applications of the form shown in Figure 45, Fig-  
OUT  
fSET  
ure 46 and Figure 47: the minimum allowable V  
INH  
OUT  
not more than 750kΩ (nominal) per Figure 3.  
voltage of operation to avoid dropout for 3V < V  
≤ 6V is shown in Figure 4. The curves are a result of  
It is often permissible to use lower R values than those  
fSET  
realizing that V  
equals V  
(neglecting  
indicated in Figure 3 and Table 1 if, for example, lower  
output ripple voltage and/or a lower output capacitance  
is desired. However, be aware of three guiding principles:  
IN(DROPOUT)  
INH  
MSP voltage drop) when dropout actually occurs, and  
that Equations 1 and 2 yield an expression for t as  
ON  
a function of V . M  
will be less fully enhanced  
INH  
TOP  
I. Minimum On-Time. Ensure I  
tions 1 and 4.  
< 93.3µA. See Equa-  
ION  
during its on-time if DRV is less than its nominal  
CC  
value of 5.3V (for example, when V < 6V and when  
INL  
II. Minimum Off-Time and Dropout Operation. The mini-  
mum off-time, t , is the shortest time required  
DRV bias is provided by INTV ). DRV ’s effect on  
CC  
CC  
CC  
R
PS  
at low line is illustrated in Figure 4.  
OFF(MIN)  
for the LTM4641 to perform the following tasks: turn  
on its power synchronous MOSFET (M ), trip the  
III. Maximum Attainable f . The maximum attainable  
SW  
BOT  
switching frequency of operation (in units of Hz) for a  
control loop’s current comparator, and turn off M  
.
BOT  
givenon-time(t ,inseconds)isgovernedsimplyby:  
ON  
The minimum input voltage on V , in volts, that one  
INH  
1
can regulate the output at and still avoid dropout is  
fMAX  
=
(8)  
given by:  
tON + tOFF(MIN)  
t
OFF(MIN)   
where a conservative value of 300ns can be used for  
V
IN(DROPOUT) = VOUT 1+  
+RPS IOUT (7)  
tON  
t
.
OFF(MIN)  
4641f  
20  
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