2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (2N)
Storage Temperature (PN/SST)
Junction Operating Temperature (2N)
Junction Operating Temperature (PN/SST)
Maximum Power Dissipation
Continuous Power Dissipation (2N)@Tc=25°C
Continuous Power Dissipation (PN/SST)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain or Source (2N/PN)
-40V
50mA
1800mW
350mW
3
4
1
r
DS(on)
≤ 30Ω
t
ON
≤ 15ns
2N SERIES
PN SERIES
SST SERIES
SOT-23
TOP VIEW
D
1
3
-65 to 200°C
-55 to 150°C
-55 to 200°C
-55 to 150°C
G
S
2
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
V
DS(on)
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/PN/SST
2N/PN
SST
0.7
0.25
Drain to Source On Voltage
2N
I
DSS
Drain to Source
2
Saturation Current
PN
SST
I
GSS
I
G
Gate Leakage Current
Gate Operating Current
2N/SST
PN
-5
-5
-5
0.3
0.35
50
50
50
-100
-1000
0.4
165
165
25
25
25
-100
-1000
150
150
5
5
5
-100
-1000
pA
V
GS
= -20V, V
DS
= 0V
V
DG
= 15V, I
D
= 10mA
125
125
mA
V
DS
= 20V, V
GS
= 0V
0.4
TYP
4391
MIN
-40
-4
-4
-10
-10
1
MAX
4392
MIN
-40
-2
-2
-5
-5
1
MAX
4393
MIN
-40
-0.5
-0.5
-3
-3
1
0.4
V
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
DS
= 20V, I
D
= 1nA
V
DS
= 15V, I
D
= 10nA
I
G
= 1mA, V
DS
= 0V
V
GS
= 0V, I
D
= 3mA
V
GS
= 0V, I
D
= 6mA
V
GS
= 0V, I
D
= 12mA
Gate to Source Forward Voltage
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
LINER [ LINEAR TECHNOLOGY ]
