LT8697
Typical perForMance characTerisTics
1.03
1.02
EN/UV THRESHOLD (V)
1.01
EFFICIENCY (%)
1.00
0.99
0.98
0.97
0.96
0.95
–55
–25
35
5
65
TEMPERATURE (°C)
95
125
8697 G07
T
A
= 25°C, unless otherwise noted.
Efficiency vs I
LOAD
V
EN
vs Temperature
100
95
90
Efficiency vs I
LOAD
100
90
80
EFFICIENCY (%)
70
60
50
40
30
20
10
85
80
75
70
65
60
55
50
0
0.5
1.5
1
LOAD CURRENT (A)
f
SW
= 2MHz
R
SENSE
= 18m
DCR
L
= 20m
R
CBL
= OPEN
V
IN
= 8V
V
IN
= 12V
V
IN
= 24V
2
2.5
8697 G08
EN/UV RISING
EN/UV FALLING
f
SW
= 2MHz
R
SENSE
= 18m
DCR
L
= 20m
R
CBL
= OPEN
V
IN
= 8V
V
IN
= 12V
V
IN
= 24V
00.01
1
0.1
LOAD CURRENT (A)
10
8697 G09
0
0.001
Efficiency vs Frequency
100
16
14
INPUT CURRENT (mA)
90
EFFICIENCY (%)
12
10
8
6
4
2
2.2
8697 G10
No Load Supply Current vs V
IN
f
SW
= 700kHz
No Load Supply Current
vs Temperature
10.0
NO LOAD INPUT CURRENT (mA)
9.5
9.0
8.5
8.0
7.5
7.0
–55
f
SW
= 700kHz
V
IN
= 12V
80
70
L = 15µH
R
SENSE
= 18m
DCR
L
= 40m
R
CBL
= OPEN
I
LOAD
= 0.9A
V
IN
= 8V
V
IN
= 12V
V
IN
= 24V
0.7
1.7
1.2
FREQUENCY (MHz)
60
0.2
0
6
12
24
30
18
INPUT VOLTAGE (V)
36
42
8697 G11
–25
5
35
65
95
TEMPERATURE (°C)
125
155
8697 G12
Top FET Current Limit
vs Duty Cycle
5.0
5.0
Top FET Current Limit
vs Temperature
5.0
30% DC
Bottom FET Current Limit
vs Temperature
4.7
CURRENT LIMIT (A)
CURRENT LIMIT (A)
4.5
70% DC
4.0
CURRENT LIMIT (A)
4.6
4.4
4.2
4.1
3.8
3.8
3.5
3.4
3.5
0
0.2
0.4
0.6
DUTY CYCLE (%)
0.8
1.0
8697 G13
3.0
–55
–25
5
35
65
TEMPERATURE (°C)
95
125
8697 G13
3.0
–55
–25
5
35
65
95
TEMPERATURE (°C)
125
155
8697 G15
8697p
For more information
5
LINEAR_DIMENSIONS [ LINEAR DIMENSIONS SEMICONDUCTOR ]
