LT1158
ELECTRICAL CHARACTERISTICS
SYMBOL
I
2
+ I
10
PARAMETER
DC Supply Current (Note 2)
CONDITIONS
V
+
= 30V, V16 = 15V, V4 = 0.5V
V
+
= 30V, V16 = 15V, V6 = 0.8V
V
+
= 30V, V16 = 15V, V6 = 2V
V
+
= V13 = 30V, V16 = 45V, V6 = 0.8V
l
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. Test Circuit, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4 open,
Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
LT1158I
MIN
4.5
8
0.8
0.9
1.3
15
9
40
12
12
1
1
l
LT1158C
MAX
3
10
18
4.5
2
15
1.4
1.7
35
47
17
17
2.5
2
1
1
130
170
180
1.4
250
550
250
250
400
200
85
120
120
1.1
0.85
1.2
15
9
40
12
12
1
1
0.8
MIN
4.5
8
TYP
2.2
7
13
3
1.4
5
1.15
1.5
25
11
43
14.5
14.5
1.75
1.5
0.1
0.5
110
150
1.25
130
350
120
130
200
100
MAX
3
10
18
4.5
2
15
1.4
1.8
35
47
17
17
2.5
2
1
1
135
180
180
1.4
250
550
250
250
400
200
UNITS
mA
mA
mA
mA
V
μA
V
V
μA
V
V
V
V
V
V
μA
V
mV
mV
mV
V
ns
ns
ns
ns
ns
ns
TYP
2.2
7
13
3
1.4
5
1.15
1.5
25
11
43
14.5
14.5
1.75
1.5
0.1
0.5
I
16
V6
I
6
V4
ΔV4
I
4
V15
V9
V1
V8
I
5
V5
Boost Current
Input Threshold
Input Current
Enable Low Threshold
Enable Hysteresis
Enable Pullup Current
Charge Pump Voltage
Bottom Gate “ON” Voltage
Boost Drive Voltage
Bottom Turn-Off Threshold
Fault Output Leakage
Fault Output Saturation
V6 = 5V
V6 = 0.8V, Monitor V9
V6 = 0.8V, Monitor V9
V4 = 0V
V
+
= 5V, V6 = 2V, Pin 16 open, V13
→
5V
V
+
= 30V, V6 = 2V, Pin16 open, V13
→
30V
V
+
= V16 = 18V, V6 = 0.8V
V
+
= V16 = 18V, V6 = 0.8V, 100mA Pulsed Load
V
+
= V16 = 5V, V6 = 0.8V
V
+
= V16 = 5V, V6 = 2V
V
+
= 30V, V16 = 15V, V6 = 2V
V
+
= 30V, V16 = 15V, V6 = 2V, I
5
= 10mA
V
+
= 30V, V16 = 15V, V6 = 2V, I
5
= 100μA
V
+
= 30V, V16 = 15V, V6 = 2V, Closed Loop
V
+
= V12 = 12V, V6 = 2V, Decrease V11
Until V15 Goes Low
Pin 6 (+) Transition, Meas. V15 – V13 (Note 4)
Pin 6 (–) Transition, Meas. V15 – V13 (Note 4)
Pin 6 (–) Transition, Meas. V15 – V13 (Note 4)
Pin 6 (–) Transition, Meas. V9 (Note 4)
Pin 6 (+) Transition, Meas. V9 (Note 4)
Pin 6 (+) Transition, Meas. V9 (Note 4)
l
l
l
l
l
l
l
l
V14 – V13 Top Turn-Off Threshold
V12 – V11 Fault Conduction Threshold
V12 – V11 Current Limit Threshold
V12 – V11 Current Limit Inhibit
V
DS
Threshold
t
R
t
D
t
F
t
R
t
D
t
F
Top Gate Rise Time
Top Gate Turn-Off Delay
Top Gate Fall Time
Bottom Gate Rise Time
Bottom Gate Turn-Off Delay
Bottom Gate Fall Time
90
l
110
150
1.25
130
350
120
130
200
100
130
120
1.1
l
l
l
l
l
l
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1158IN, LT1158CN: T
J
= T
A
+ (P
D
×
70°C/W)
LT1158ISW, LT1158CSW: T
J
= T
A
+ (P
D
×
110°C/W)
Note 3:
Dynamic supply current is higher due to the gate charge
being delivered at the switching frequency. See typical performance
characteristics and applications information.
Note 4:
Gate rise times are measured from 2V to 10V, delay times are
measured from the input transition to when the gate voltage has decreased
to 10V, and fall times are measured from 10V to 2V.
1158fb
3
LINEAR_DIMENSIONS [ LINEAR DIMENSIONS SEMICONDUCTOR ]
