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LT1158 参数 Datasheet PDF下载

LT1158图片预览
型号: LT1158
PDF下载: 下载PDF文件 查看货源
内容描述: 半桥式N沟道功率MOSFET驱动器 [Half Bridge N-Channel Power MOSFET Driver]
分类和应用: 驱动器
文件页数/大小: 22 页 / 250 K
品牌: LINEAR_DIMENSIONS [ Linear Dimensions ]
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LT1158  
APPLICATIONS INFORMATION  
the value of R  
for the 5-lead MOSFET increases by  
of the LT1158 current limit loop, an initial current spike of  
SENSE  
the current sensing ratio (typically 1000 – 3000), thus  
eliminating the need for a low valued shunt. ΔV is in the  
range of 1V to 3V in most applications.  
from 2 to 5 times the final value will be present for a few  
μs, followed by an interval in which I = 0. The current  
DS  
spike is normally well within the safe operating area (SOA)  
of the MOSFET, but can be further reduced with a small  
(0.5μH) inductor in series with the output.  
Assuming a dead short, the MOSFET dissipation will rise  
to V  
• I . For example, with a 24V supply and I  
SUPPLY SC  
SC  
= 10A, the dissipation would be 240W. To determine how  
longtheMOSFETcanremainatthisdissipationlevelbefore  
it must be shut down, refer to the SOA curves given in  
the MOSFET data sheet. For example, an IRFZ34 would  
be safe if shut down within 10ms.  
A Tektronix A6303 current probe is highly recommended  
for viewing output fault currents.  
I
SC  
If Short-Circuit Protection is Not Required  
5μs/DIV  
In applications which do not require the current sense  
capability of the LT1158, the sense pins 11 and 12 should  
both be connected to pin 13, and the FAULT pin 5 left  
open. The enable pin 4 may still be used to shut down  
the device. Note, however, that when unprotected the top  
MOSFET can be easily (and often dramatically) destroyed  
by even a momentary short.  
LT1158 F08  
Figure 8. Top MOSFET Short-Circuit Turn-On current  
If neither the enable nor input pins are pulled low in  
response to the fault indication, the top MOSFET current  
will recover to a steady-state value I regulated by the  
LT1158 as shown in Figure 8:  
SC  
Self-Protection with Automatic Restart  
150mV  
ISC =  
When using the current sense circuits of Figures 6 and 7,  
RSENSE  
local shutdown can be achieved by connecting the FAULT  
150mV  
ISC  
RSENSE  
=
pin through resistor R to the enable pin as shown in  
F
Figure 9. An optional thermostat mounted to the load or  
2  
MOSFET heatsink can also be used to pull enable low.  
r 150mV  
RSENSE  
(
)
150mV  
ISC =  
1−  
Aninternal2Acurrentsourcenormallykeepstheenable  
ΔV  
+
capacitorCENchargedtothe7.5Vclampvoltage(ortoV ,  
2  
+
r 150mV  
(
)
150mV  
for V < 7.5V). When a fault occurs, CEN is discharged to  
RSENSE  
=
1−  
below the enable low threshold (1.15V typ) which shuts  
down both MOSFETs. When the FAULT pin or thermostat  
releases, CEN recharges to the upper enable threshold  
where restart is attempted. In a sustained short circuit,  
FAULT will again pull low and the cycle will repeat until the  
short is removed. The time to shut down for a DC input  
or thermal fault is given by:  
ISC  
ΔV  
r = current senseratio, ΔV = VGS = VGS VT  
The time for the current to recover to I following the  
initial current spike is approximately Q /0.5mA, where  
SC  
GS  
Q
is the MOSFET gate-to-source charge. I need not  
GS  
SC  
be set higher than the required start-up current for mo-  
t
= (100 + 0.8R ) C  
EN  
DC input  
SHUTDOWN  
F
tors (see Starting High In-Rush Current Loads). Note that  
1158fb  
14  
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