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LT1158CSW 参数 Datasheet PDF下载

LT1158CSW图片预览
型号: LT1158CSW
PDF下载: 下载PDF文件 查看货源
内容描述: 半桥式N沟道功率MOSFET驱动器 [Half Bridge N-Channel Power MOSFET Driver]
分类和应用: 驱动器
文件页数/大小: 22 页 / 250 K
品牌: LINEAR_DIMENSIONS [ Linear Dimensions ]
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LT1158  
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating  
temperature range, otherwise specifications are at TA = 25°C. Test Circuit, V+ = V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4 open,  
Gate Feedback pins connected to Gate Drive pins unless otherwise specified.  
LT1158I  
TYP  
LT1158C  
TYP MAX UNITS  
SYMBOL  
I + I  
PARAMETER  
CONDITIONS  
+
MIN  
MAX  
MIN  
DC Supply Current (Note 2) V = 30V, V16 = 15V, V4 = 0.5V  
2.2  
7
13  
3
10  
18  
2.2  
7
3
10  
18  
mA  
mA  
mA  
2
10  
+
+
V = 30V, V16 = 15V, V6 = 0.8V  
4.5  
8
4.5  
8
V = 30V, V16 = 15V, V6 = 2V  
13  
+
I
Boost Current  
V = V13 = 30V, V16 = 45V, V6 = 0.8V  
3
1.4  
5
4.5  
2
3
1.4  
5
4.5  
2
mA  
V
16  
l
l
l
l
l
V6  
Input Threshold  
0.8  
0.8  
I
Input Current  
V6 = 5V  
15  
1.4  
1.7  
35  
15  
1.4  
1.8  
35  
μA  
V
6
V4  
Enable Low Threshold  
Enable Hysteresis  
Enable Pullup Current  
Charge Pump Voltage  
V6 = 0.8V, Monitor V9  
V6 = 0.8V, Monitor V9  
V4 = 0V  
0.9  
1.3  
15  
1.15  
1.5  
25  
0.85  
1.2  
15  
1.15  
1.5  
25  
ΔV4  
V
I
μA  
4
+
+
l
l
V15  
9
40  
11  
43  
9
40  
11  
43  
V
V
V = 5V, V6 = 2V, Pin 16 open, V13 5V  
47  
17  
17  
2.5  
2
47  
17  
17  
2.5  
2
V = 30V, V6 = 2V, Pin16 open, V13 30V  
+
l
l
V9  
V1  
Bottom Gate “ON” Voltage  
Boost Drive Voltage  
V = V16 = 18V, V6 = 0.8V  
12  
12  
1
14.5  
14.5  
1.75  
1.5  
12  
12  
1
14.5  
14.5  
1.75  
1.5  
V
V
+
V = V16 = 18V, V6 = 0.8V, 100mA Pulsed Load  
+
V14 – V13 Top Turn-Off Threshold  
V = V16 = 5V, V6 = 0.8V  
V
+
V8  
Bottom Turn-Off Threshold  
Fault Output Leakage  
V = V16 = 5V, V6 = 2V  
1
1
V
+
l
I
V = 30V, V16 = 15V, V6 = 2V  
0.1  
1
0.1  
1
μA  
V
5
+
V5  
Fault Output Saturation  
V = 30V, V16 = 15V, V6 = 2V, I = 10mA  
0.5  
1
0.5  
1
5
+
V12 – V11 Fault Conduction Threshold V = 30V, V16 = 15V, V6 = 2V, I = 100μA  
90  
110  
150  
130  
85  
110  
150  
135  
mV  
5
+
V12 – V11 Current Limit Threshold  
V = 30V, V16 = 15V, V6 = 2V, Closed Loop  
130  
120  
170  
180  
120  
120  
180  
180  
mV  
mV  
l
+
V12 – V11 Current Limit Inhibit  
V = V12 = 12V, V6 = 2V, Decrease V11  
1.1  
1.25  
1.4  
1.1  
1.25  
1.4  
V
V
Threshold  
Until V15 Goes Low  
DS  
l
l
l
l
l
l
t
t
t
t
t
t
Top Gate Rise Time  
Top Gate Turn-Off Delay  
Top Gate Fall Time  
Pin 6 (+) Transition, Meas. V15 – V13 (Note 4)  
Pin 6 (–) Transition, Meas. V15 – V13 (Note 4)  
Pin 6 (–) Transition, Meas. V15 – V13 (Note 4)  
Pin 6 (–) Transition, Meas. V9 (Note 4)  
130  
350  
120  
130  
200  
100  
250  
550  
250  
250  
400  
200  
130  
350  
120  
130  
200  
100  
250  
550  
250  
250  
400  
200  
ns  
ns  
ns  
ns  
ns  
ns  
R
D
F
Bottom Gate Rise Time  
R
D
F
Bottom Gate Turn-Off Delay Pin 6 (+) Transition, Meas. V9 (Note 4)  
Bottom Gate Fall Time Pin 6 (+) Transition, Meas. V9 (Note 4)  
Note 1: Stresses beyond those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to any Absolute  
Maximum Rating condition for extended periods may affect device  
reliability and lifetime.  
Note 3: Dynamic supply current is higher due to the gate charge  
being delivered at the switching frequency. See typical performance  
characteristics and applications information.  
Note 4: Gate rise times are measured from 2V to 10V, delay times are  
Note 2: T is calculated from the ambient temperature T and power  
measured from the input transition to when the gate voltage has decreased  
to 10V, and fall times are measured from 10V to 2V.  
J
A
dissipation P according to the following formulas:  
D
LT1158IN, LT1158CN: T = T + (P × 70°C/W)  
J
A
D
LT1158ISW, LT1158CSW: T = T + (P × 110°C/W)  
J
A
D
1158fb  
3