LT1160/LT1162
The
●
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
=
3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
I
UVOUT
V
UVOUT
V
OH
V
OL
t
r
Undervoltage Output Leakage
Undervoltage Output Saturation
Top Gate ON Voltage
Bottom Gate ON Voltage
Top Gate OFF Voltage
Bottom Gate OFF Voltage
Top Gate Rise Time
Bottom Gate Rise Time
t
f
Top Gate Fall Time
Bottom Gate Fall Time
t
D1
Top Gate Turn-On Delay
Bottom Gate Turn-On Delay
t
D2
Top Gate Turn-Off Delay
Bottom Gate Turn-Off Delay
t
D3
Top Gate Lockout Delay
Bottom Gate Lockout Delay
t
D4
Top Gate Release Delay
Bottom Gate Release Delay
CONDITIONS
V
+
= 15V
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
ELECTRICAL CHARACTERISTICS
MIN
TYP
0.1
0.2
MAX
5
0.4
12
12
0.7
0.7
200
200
140
140
500
400
600
400
600
500
500
400
UNITS
µA
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
+
= 7.5V, I
UVOUT
= 2.5mA
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INBOTTOM
(+) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
(Note 5)
V
INTOP
(+) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 5)
V
INBOTTOM
(–) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
(Note 5)
V
INTOP
(–) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 5)
11
11
11.3
11.3
0.4
0.4
130
90
60
60
250
200
300
200
300
250
250
200
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 3:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1160CN/LT1160IN: T
J
= T
A
+ (P
D
)(70°C/W)
LT1160CS/LT1160IS: T
J
= T
A
+ (P
D
)(110°C/W)
LT1162CN/LT1162IN: T
J
= T
A
+ (P
D
)(58°C/W)
LT1162CS/LT1162IS: T
J
= T
A
+ (P
D
)(80°C/W)
Note 4:
I
S
is the sum of currents through SV
+
, PV
+
and Boost pins.
I
BOOST
is the current through the Boost pin. Dynamic supply current is
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 5:
See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
11602fb
3
LINEAR [ LINEAR INTEGRATED SYSTEMS ]
