LT1101
ELECTRICAL CHARACTERISTICS
VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100,
–40°C ≤ TA ≤ 85°C for AI/I grades, unless otherwise noted (Note 4).
LT1101AM/AI
TYP
LT1101M/I
TYP
SYMBOL PARAMETER
CONDITIONS
G = 100, V = 0.1V to 3.5V, R = 50k
MIN
MAX MIN
MAX
UNITS
G
Gain Error
0.026
0.011
0.080
0.070
0.028
0.014
0.120
0.100
%
%
E
0
L
G = 10, V = 0.15, R = 50k
CM
L
TCG
Gain Error Drift
R = 50k (Note 2)
L
1
4
1
5
ppm/°C
E
G
Gain Nonlinearity
G = 100, R = 50k
45
4
110
13
48
5
140
15
ppm
ppm
NL
L
G = 10, R = 50k (Note 2)
L
V
Input Offset Voltage
90
350
110
110
500
950
µV
µV
OS
LT1101ISW
∆V /∆T Input Offset Voltage Drift
(Note 2)
LT1101ISW
0.4
2.0
0.5
0.5
2.8
4.8
µV/°C
µV/°C
OS
l
Input Offset Current
0.16
0.5
7
0.80
4.0
10
0.19
0.8
7
1.30
7.0
12
nA
pA/°C
nA
OS
∆V /∆T Input Offset Current Drift
(Note 2)
(Note 2)
OS
I
Input Bias Current
B
∆I /∆T
Input Bias Current Drift
10
25
10
30
pA/°C
B
CMRR
Common Mode
Rejection Ratio
G = 100, V = 0.1V to 3.2V
91
80
105
98
88
77
104
97
dB
dB
CM
G = 10, V = 0.1V to 2.9V, V
= 0.15V
REF
CM
I
Supply Current
88
135
92
160
µA
S
V
Maximum 0utput
Voltage Swing
Output High, 50k to GND
Output High, 2k to GND
3.8
3.0
4.1
3.7
4.5
0.7
125
3.8
3.0
4.1
3.7
4.5
0.7
125
V
V
mV
mV
mV
0
Output Low, V = 0, No Load
8
1.5
170
8
1.5
170
REF
Output Low, V = 0, 2k to GND
REF
Output Low, V = 0, I
= 100µA
REF
SINK
1101fa
6
Linear Systems [ Linear Systems ]
