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LS843-5 参数 Datasheet PDF下载

LS843-5图片预览
型号: LS843-5
PDF下载: 下载PDF文件 查看货源
内容描述: 超低噪声低漂移整体式双N沟道JFET [ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET]
分类和应用:
文件页数/大小: 2 页 / 33 K
品牌: LINEAR [ LINEAR INTEGRATED SYSTEMS ]
 浏览型号LS843-5的Datasheet PDF文件第1页  
SYMBOL
Y
OSS
Y
OS
|Y
OS1-2
|
CMR
CMR
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
Operating
Differential
COMMON MODE REJECTION
-20 log |∆V
GS1-2
/∆V
DS
|
NOISE
MIN.
--
--
--
90
--
TYP.
--
0.2
0.02
110
85
--
--
--
MAX. UNITS
20
2
0.2
--
--
0.5
7
11
µmho
µmho
µmho
dB
dB
dB
nV/√Hz
nV/√Hz
CONDITIONS
V
DG
= 15V
V
DG
= 15V
V
GS
= 0
I
D
= 500µA
∆V
DS
= 10 to 20V
∆V
DS
= 5 to 10V
V
DS
= 15V
f= 100Hz
V
DS
= 15V
NBW= 1Hz
V
DS
= 15V
NBW= 1Hz
V
DS
= 15V
V
DG
= 15V
I
D
= 500µA
I
D
= 500µA
V
GS
= 0 R
G
= 10MΩ
NBW= 6Hz
I
D
= 500µA f= 1kHz
I
D
= 500µA f= 10Hz
NF
e
n
e
n
Figure
Voltage
Voltage
CAPACITANCE
Input
Reverse Transfer
Drain-to-Drain
--
--
--
C
ISS
C
RSS
C
DD
--
--
--
--
--
0.5
8
3
--
pF
pF
pF
I
D
= 500µA
I
D
= 500µA
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
S1 1
D1 2
SS 3
G1 4
8
7
6
5
G2
SS
D2
S2
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
2 3 4
1
5
8 7 6
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261