ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS310 LS311 LS312 LS313 MIN. UNITS CONDITIONS
|VBE1-VBE2
|
Base Emitter Voltage Differential
1
3
0.4
1
0.2
0.5
0.4
1
TYP. mV
MAX mV.
IC = 10 µA
VCE = 5V
VCE = 5V
∆|(VBE1-VBE2)|/°C Base Emitter Voltage Differential
2
1
5
0.5
2
1
5
TYP. µV/°C IC = 10 µA
MAX.
Change with Temperature
15
TA = -55°C to +125°C
|IB1- IB2
|
Base Current Differential
1.25 TYP. nA
IC = 10µA
VCE = 5V
10
5
5
MAX. nA
MAX. nA/°C IC = 10µA
|∆(IB1-IB2)|/°C
Base Current Differential
Change With Temperature
Current Gain Differential
0.5
0.3
0.5
VCE = 5V
TA = -55°C to +125°C
IC = 10µA VCE = 5V
hFE1/hFE2
10
5
5
5
TYP.
%
TO-71
TO-78
P-DIP
Six Lead
(8.13)
(7.37)
0.320
0.290
0.335
0.370
0.305
0.230
DIA.
0.195
0.175
0.209
DIA.
0.335
C1 1
C2
8
7
MAX.
0.030
0.150
0.405
(10.29)
MAX.
0.165
0.185
0.040
MAX.
B1 2
E1 3
B2
0.115
0.016
0.019
DIM. A
6 E2
MIN. 0.500
6 LEADS
0.019
0.016
0.500 MIN.
0.050
0.016
0.021
DIM. B
N/C 4
5
N/C
SEATING
PLANE
DIA.
0.200
3
0.100
0.100
0.029
0.045
SOIC
3
7
2
4
2
4
0.150 (3.81)
0.158 (4.01)
1
5
1
8
5
8
6
7
6
0.100
C1 1
C2
B2
8
45°
45°
B1
2
0.188
7
6
5
(4.78)
0.046
0.036
0.048
0.028
0.028
0.034
0.197(5.00)
E1 3
E2
N/C
4
N/C
(5.79)
0.228
(6.20)
0.244
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS310: VCB= 20V; for LS311, LS312 & LS313: VCB = 30V.
4. For LS310, LS311 & LS313: VCC= ±45V; for LS312: VCC= ±100V.
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