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3N190 参数 Datasheet PDF下载

3N190图片预览
型号: 3N190
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道双MOSFET增强型 [P-CHANNEL DUAL MOSFET ENHANCEMENT MODE]
分类和应用: 晶体晶体管输入元件放大器
文件页数/大小: 2 页 / 256 K
品牌: LINEAR [ LINEAR INTEGRATED SYSTEMS ]
 浏览型号3N190的Datasheet PDF文件第1页  
ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
g
fs
Y
os
r
ds(on)
C
rss
C
iss
C
oss
CHARACTERISTIC
Forward Transconductance
Output Admittance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance Output Shorted
Output Capacitance Input Shorted
5
MIN
1500
TYP
MAX UNITS
4000
300
300
1.0
4.5
3.0
pF
µS
CONDITIONS
V
DS
= -15V, I
D
= -5mA,
f
= 1kHz
V
DS
= -20V, I
D
= -100µA
V
DS
= -15V, I
D
= -5mA,
f
= 1MHz
SWITCHING CHARACTERISTICS
SYMBOL
t
d(on)
t
r
t
off
CHARACTERISTIC
Turn On Delay Time
Turn On Rise Time
Turn Off Time
MIN
TYP
MAX UNITS
15
30
50
ns
CONDITIONS
V
DD
= -15V, I
D(on)
= -5mA,
R
G
= R
L
= 1.4kΩ
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.029
0.045
2 3 4
1
5
8 76
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.100
0.100
45°
0.028
0.034
1.
2.
3.
4.
5.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Per transistor.
Approximately doubles for every 10 °C increase in T
A
.
Pulse: t = 300µs, Duty Cycle
3%
Measured at end points, T
A
and T
B
.
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