Specifications GAL22V10D
Specifications GAL22V10
AC Switching Characteristics
Over Recommended Operating Conditions
COM
-4
COM
-5
COM/IND
-7
TEST
DESCRIPTION
Input or I/O to Combinatorial Output
PARAM
COND.1
UNITS
MIN. MAX. MIN. MAX. MIN. MAX.
tpd
tco
tcf2
tsu
th
A
A
1
4
1
5
1
7.5
4.5
3
ns
ns
ns
ns
Clock to Output Delay
1
3.5
2.5
—
1
4
1
—
—
Clock to Feedback Delay
—
2.5
—
3
3
—
4.5
Setup Time, Input or Fdbk before Clk↑
Hold Time, Input or Fdbk after Clk↑
—
—
—
A
0
—
—
0
—
—
0
—
—
ns
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
167
142.8
111
MHz
fmax3
A
A
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
200
250
—
—
166
200
—
—
133
166
—
—
MHz
MHz
Maximum Clock Frequency with
No Feedback
twh
twl
—
—
B
Clock Pulse Duration, High
Clock Pulse Duration, Low
Input or I/O to Output Enabled
2
2
1
—
—
5
2.5
2.5
1
—
—
6
3
3
1
—
—
ns
ns
ns
ten
7.5
tdis
tar
C
A
Input or I/O to Output Disabled
1
1
5
1
1
5.5
5.5
1
1
7.5
9
ns
ns
Input or I/O to Asynch. Reset of Reg.
4.5
tarw
tarr
—
—
—
Asynch. Reset Pulse Duration
4.5
3
—
—
—
4.5
4
—
—
—
7
5
5
—
—
—
ns
ns
ns
Asynch. Reset to Clk↑ Recovery Time
Synch. Preset to Clk↑ Recovery Time
tspr
3
4
1) Refer to Switching Test Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section. Characterized initially and after any design or process changes that may affect these
parameters.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOL
PARAMETER
Input Capacitance
I/O Capacitance
MAXIMUM*
UNITS
pF
TEST CONDITIONS
VCC = 5.0V, VI = 2.0V
VCC = 5.0V, VI/O = 2.0V
CI
8
8
CI/O
pF
*Characterized but not 100% tested.
8
LATTICE [ LATTICE SEMICONDUCTOR ]
