Specifications ispLSI and pLSI 1032E
1
Absolute Maximum Ratings
Supply Voltage V .................................. -0.5 to +7.0V
cc
Input Voltage Applied........................ -2.5 to V +1.0V
CC
Off-State Output Voltage Applied ..... -2.5 to V +1.0V
CC
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T ) with Power Applied ... 150°C
J
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Commercial
Industrial
MIN.
4.75
4.5
0
MAX.
5.25
5.5
UNITS
V
V
V
V
T = 0°C to + 70°C
A
V
CC
Supply Voltage
T = -40°C to + 85°C
A
Input Low Voltage
Input High Voltage
0.8
V
V
IL
2.0
V +1
cc
IH
Table 2-0005/1032E
Capacitance (TA=25oC, f=1.0 MHz)
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
VCC = 5.0V, VPIN = 2.0V
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
8
pf
C1
15
pf
VCC= 5.0V, VPIN = 2.0V
Y0 Clock Capacitance
C2
Table 2-0006/1032E
Data Retention Specifications
PARAMETER
Data Retention
MINIMUM
20
MAXIMUM
UNITS
Years
–
–
–
ispLSI Erase/Reprogram Cycles
pLSI Erase/Reprogram Cycles
10000
100
Cycles
Cycles
Table 2-0008/1032E
3
LATTICE [ LATTICE SEMICONDUCTOR ]
