Specifications
ispLSI and pLSI 1032
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
≤
3ns 10% to 90%
1.5V
1.5V
See figure 2
Figure 2. Test Load
+ 5V
R1
Device
Output
R2
CL
*
Test
Point
3-state levels are measured 0.5V from steady-state
active level.
Table 2- 0003
Output Load Conditions (see figure 2)
*
CL includes Test Fixture and Probe Capacitance.
Test Condition
A
B
Active High
Active Low
C
Active High to Z
at
V
OH
- 0.5V
Active Low to Z
at
V
OL
+ 0.5V
R1
470Ω
R2
390Ω
390Ω
390Ω
390Ω
390Ω
CL
35pF
35pF
35pF
5pF
5pF
∞
470Ω
∞
470Ω
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
I
OL
=8 mA
I
OH
=-4 mA
CONDITION
MIN.
–
2.4
–
–
–
–
–
–
–
Industrial/Military
TYP.
3
–
–
–
–
–
–
–
130
135
MAX.
0.4
–
-10
10
-150
-150
-200
190
220
UNITS
V
V
µA
µA
µA
µA
mA
mA
mA
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
I
OS
1
I
CC
2,4
1.
2.
3.
4.
Input or I/O Low Leakage Current 0V
≤
V
IN
≤
V
IL
(MAX.)
Input or I/O High Leakage Current 3.5V
≤
V
IN
≤
V
CC
isp Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
0V
≤
V
IN
≤
V
IL
(MAX.)
0V
≤
V
IN
≤
V
IL
V
CC
= 5V, V
OUT
= 0.5V
V
IL
= 0.5V, V
IH
= 3.0V Commercial
f
TOGGLE
= 1 MHz
One output at a time for a maximum duration of one second.
Measured using eight 16-bit counters.
Typical values are at V
CC
= 5V and T
A
= 25
o
C.
Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption sec-
Table 2- 0007A-32-isp
tion of this datasheet and Thermal Management section of this Data Book to estimate maximum I
CC
.
4
1996 ISP Encyclopedia
LATTICE [ LATTICE SEMICONDUCTOR ]
