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CXZ49GFB12000H0PESZZ 参数 Datasheet PDF下载

CXZ49GFB12000H0PESZZ图片预览
型号: CXZ49GFB12000H0PESZZ
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体单元表面贴装型 [Crystal Units Surface Mount Type]
分类和应用: 晶体
文件页数/大小: 27 页 / 1671 K
品牌: KYOCERA AVX [ KYOCERA AVX ]
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Handling Notes  
The oscillation start-up conditions are described as  
RL  R  
and in order to oscillate the crystal unit accurately, it must be designed such that the negative resistance of the oscillation  
circuit becomes bigger comparing with the resonance resistance value at the time of loading. This ratio is called oscillation  
margin degree MOSC and it is one of critical factors when designing the oscillation circuit and is described as below.  
For oscillation circuit designing conditions, it is recommended that an oscillation circuit be designed using a negative  
resistance of a value five to ten times or more larger than RL calculated from the resonance resistance specification value.  
M
OSC  R / RL 5  
In a steady oscillation state, the load resonance resistance is given as follows:  
RL  R  
The mutual conductance of the oscillation circuit decreases after the oscillation has started to continuously compensate for  
the power loss due to the load resonance resistance of the crystal unit, which continues oscillation.  
The frequency condition is given as follows:  
XL XC, XL XC 0  
As shown in the following figure, the reactance of the crystal unit varies to a value matching the load capacitance of the  
oscillation circuit CL XC. Thus an oscillation frequency is determined.  
+
X
fp  
fs  
fL  
fs : Series resonance frequency  
fL : Load resonance frequency  
fp : Parallel resonance frequency  
Frequency  
Le  
–1/ CL  
X
- 54 -  
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