KK4049B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
VCC
VIN
VOUT
IIN
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
-0.5 to +20
**
VCC to +18
V
-0.5 to VCC +0.5
V
mA
mW
±10
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
PD
Tstg
TL
Power Dissipation per Output Transistor
Storage Temperature
100
-65 to +150
260
mW
°C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
°C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
The KK4049B has high-to-low level voltage conversion capability but not low-to-high level; therefore it is
recommended that VIN ≥ VCC
**
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Min
3.0
Max
18
Unit
V
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
**
VIN
VCC
0
18
V
VOUT
TA
VCC
+125
V
-55
°C
**
The KK4049B has high-to-low level voltage conversion capability but not low-to-high level; therefore it is
recommended that VIN ≥ VCC
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
V
OUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
2
KODENSHI [ KODENSHI KOREA CORP. ]
