KK4006B
MAXIMUM RATINGS
*
Symbol
V
DD
V
IN
I
IN
P
D
P
tot
Tstg
T
L
*
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP, SOIC
Package
Power Dissipation per Output Transistor
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
-0.5 to +20
-0.5 to V
DD
+0.5
±10
500**
100
-65 to +150
260
Unit
V
V
mA
mW
mW
°C
°C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**Derating: - Plastic DIP from -55 to +100°C
- SOIC Package from -55 to +65°C
- Plastic DIP: - 12 mW/°C from +100 to +125°C
- SOIC Package: : - 7 mW/°C from +65 to +125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
T
A
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min
3.0
0
-55
Max
18
V
CC
+125
Unit
V
V
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation V
IN
should be constrained to the range GND≤V
IN
≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either Vss or V
DD
). Unused
outputs must be left open.
2
KODENSHI [ KODENSHI KOREA CORP. ]
