Optical Monitoring Photodiode Chip for KIP-MxM
KIP-MxM
Description
KIP-MxM-1
is InGaAs PIN Photodiode chip with BIG size active diameter(Ø1.0mm,Ø2.0mm,Ø3.0mm).
It is recommended for Laser diode life test and optical power monitoring.
Features
●
Front illuminated planar PIN-PD
●
High reliability and environmental endurance
●
Wide spectral response range from 0.9 um to 1.6 um
Applications
●
Laser diode power monitoring
●
Laser diode life test
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
V
R max.
10
V
Reverse Voltage
T
opr
Operating Temperature
-40 ~ +85
℃
T
stg.
Storage Temperature
-40 ~ +100
℃
T
sol.
Soldering Temperature *1
260
℃
*1 : Soldering Time
≤
10 seconds (At a distance of 1 mm from the package).
Electro-Optical Characteristics
KIP - M1M - 1
KIP - M2M - 1
KIP - M3M - 1
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
I
D
Dark Current
1.0
5.0
2.0 10.0
10.0 50.0
nA
1.31um
0.85
0.85
0.85
Responsivity
S
mA/mW
1.55um
0.90
0.90
0.90
f
C
3dB Cut off frequency
2
4
-
MHz
18
35
-
4
8
-
C
T
Terminal Capacitance
250 500
pF
90 150
550 1000
* These specifications are subject to change without notice.
Parameter
Symbol
KIP-M1M
KIP-M2M
KIP-M3M
Unit
Condition
@ V
R
=5V, 25℃
@ V
R
=5V, 25℃
@V
R
=5V, RL=50Ω
@ V
R
=5V, f=1MHz
Physical Dimension Properties
Parameter
Active area
Chip out dimension
bonding Pad Size
Chip Thickness
Ordering information
KIP
KODENSHI
InGaAs
PIN Photodiode
Chip
Symbol
Ø
Sq
Ø
t
KIP - M1M - 1
Typ.
1.0
1.4 x 1.4
KIP - M2M - 1
Typ.
2.0
2.4 x 2.4
100
150
KIP - M3M - 1
Typ.
3.0
3.6 x 3.6
Unit
㎜
㎟
㎛
㎛
Data Rate
M: Monitoring
Active area
1M: Ø1.0
㎜
2M: Ø2.0
㎜
3M: Ø3.0
㎜
Carrier type
1: chips in gel pack
2: chips on
submounter
3: chips on blue tape
The engineering spec can be revised without any previous notice.
When customer's applying, please request us a revised specification before submitting the specification to the customers.
1/2
Rev.001
For more information on other parts available, please visit our website:
www.kodenshi.co.kr
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea