1.25G InGaAs PIN Photodiode Chip
KIP-107-1
Description
KIP-107-1
is InGaAs PIN Photodiode chip with Ø75um active diameter.
It is recommended for optical data communication with high sensitivity.
Features
Front illuminated planar PIN-PD
Low capacitance and low dark current
High reliability and environmental endurance
Wide operating wavelength range from 1.1µm to 1.6µm
Applications
Optical Data Communications for 1.25 / 2.5 Gbps
Optical power monitoring
Absolute Maximum Ratings
Symbol
Parameter
V
R
Reverse Voltage
P
max
Maximun Optical Power Input
I
F
Forward Current
T
opr
Operating Temperature
T
stg.
Storage Temperature
Die- Attach Temperature *1
*1 : Attach Temperature Time
≤
60 seconds max
Ratings
20
30
10
-40 ~ +85
-40 ~ +100
300
Unit
V
mW
mA
℃
℃
℃
Electro-Optical Characteristics
Parameter
Symbol Min. Typ. Max.
75
Active area(Ø)
D
I
D
Dark Current
0.04
0.5
1.31um
0.85 0.90
Responsivity
S
1.55um
0.90 0.95
f
h,-3dB
3dB Cut off frequency
2
-
Capacitance
Cp
0.8
1.2
* These specifications are subject to change without notice.
Physical Dimension Properties
Parameter
Active area(Ø)
Chip Size
bonding Pad Size (Ø)
Chip Thickness
Ordering information
KIP
KODENSHI
InGaAs
PIN Photodiode
Chip
Unit
㎛
nA
mA/mW
GHz
pF
Condition
@ V
R
=5V, 25℃
@ V
R
=5V, 25℃
@V
R
=5, RL=50Ω
@ V
R
=5V, f=1MHz
Symbol
D
-
-
t
Typ.
75
250x250
80
120
Unit
㎛
㎛
2
㎛
㎛
Data Rate
M: Monitoring
1: 1.5 Gbps
2: 2.5 Gbps
Carrier type
Active area
05: Ø50
㎛
1: chips in gel pack
07: Ø75
㎛
25:
□
250 sq
㎛
2: chips on
submounter
3: chips on blue tape
1/1
For more information on other parts available, please visit our website:
www.kodenshi.co.kr
Rev.002
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
KODENSHI [ KODENSHI KOREA CORP. ]
