Infrared Emitting Diode(GaAlAs)
KEM5001R
The KEM5001R is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage.
at emission wavelength 870nm and has a high radiant
efficiency over a wide range of forward current.
1.15
Dimensions
[Unit : mm]
This device is optimized for speed and efficiency
0.085
0.45
Features
0.70
3.70±0.1
870nm wavelength
Low forward voltage
2.50
2.60
* PIN Description
ANODE
CATHODE
High power and high reliability
Available for pulse operating
Surface Mountable Leadless Package
Applications
IR Audio and Telephone
IR Communication
Optical Switch
Available for Wireless Digital Data Transmission
Absolute Maximum Ratings
Parameter
Power Dissipation
Forward Current
Pulse Forward Current *1
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
*2
*1. Duty ratio=1/100, pulse width=0.1ms
*2. MAX 5sec
[T
A
= 25
Symbol
PD
IF
IFP
VR
Topr.
Tstg.
Tsol
Rating
95
50
1
5
-25~+85
-25~+100
260
Unit
mW
mA
A
V
]
0.70
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Voltage
Radiant intensity
Peak Emission Wavelength
Spectral Bandwidth 50%
Half Angle
Rise Time
Symbol
V
F
V
R
P
O
p
Conditions
I
F
=50㎃
I
R
=10uA
I
F
=50㎃
I
F
=20㎃
I
F
=20㎃
I
F
=30mA
I
F
=50mA
Min.
-
4
13
-
-
-
-
Typ.
1.6
-
16
870
45
±20
15
Max.
1.9
-
-
-
-
-
-
[T
A
= 25
Unit.
V
V
�½/sr
nm
nm
deg.
ns
2.30±0.1
0.80
]
Θ
1/2
Tr
-1-
KODENSHI [ KODENSHI KOREA CORP. ]
