Infrared Emitting Diode(GaAs)
KEL1001L
The KEL1001L, high-power GaAs IRED mounted
in a clear side-looking package, is compact,
narrow radiant angle, and easy to mount.
Dimensions
[Unit : mm]
Features
High power with narrow radiant angle
Side-looking with plastic package
RoHS Compliant
Applications
Photointerrupter
Optical switches
Mouse, toys
G.Tolerance :
±0.2
Absolute Maximum Ratings
Parameter
Forward Current
Reverse Voltage
Pulse Forward Current*
1
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
*2
Symbol
I
F
V
R
I
FP
P
D
Topr.
Tstg.
Tsol
50
5
1
100
[T
A
= 25
Rating
Unit
mA
V
A
mW
]
-25~+85
-30~+100
260
*1. Pulse width tw=100µsec, cycle T=10msec
*2. Distance from end of the package =2mm, time=5sec, Max.
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Current
Capacitance
Radiant intensity
Peak Wavelength
Spectral Width at FWHM
Half Angle
-1-
Symbol
V
F
I
R
C
T
P
O
p
Conditions
I
F
=20㎃
V
R
=5V
f=1㎒
I
F
=20㎃
I
F
=20㎃
Min.
-
-
-
-
-
-
-
Typ.
1.2
-
25
5
940
50
10
Max.
2.0
100
-
-
-
-
-
[T
A
= 25
Unit.
V
µA
㎊
�½/sr
nm
nm
degrees
]
KODENSHI [ KODENSHI KOREA CORP. ]
