Infrared Emitting Diodes(GaAs)
KEL-3001A
Power dissipation Vs.
Ambient temperature
125
1000
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
100
Ta=25°C
100
Relative radiant intensity Po
1
10
100
1000
10000
Power dissipation P
D
[mW]
Radiant intensity Po [mW]
10
100
75
1
50
10
0.1
25
0
0
25
50
75
100
1
0.01
-20
0
20
40
60
80
100
Ambient temperature Ta [°C]
Forward current I
F
[mA]
Ambient temperature Ta [°C]
Relative intensity Vs.
Wavelength
120
125
Forward current Vs.
Forward voltage
Radiant Pattern
Angle (deg.)
Ta=25°C
Ta=25°C
Ta=25°C
100
80
Forward current I
F
[mA]
400
500
600
700
800
900
1000
1100
100
Relative intensity [%]
75
60
50
40
20
25
0
0
0
0.5
1
1.5
2
2.5
Wavelength
λ
[nm]
Forward voltage V
F
[V]
Relative intensity (%)
Relative radiant intensity Vs.
Distance
1000
Relative radiant intensity Vs.
Distance test method
Ta=25°C
Relative radiant intensity Po [%]
100
10
I
F
=50mA
1
l
Detector
0.1
0.1
1
10
100
1000
Distance
l
[mA]
KODENSHI [ KODENSHI KOREA CORP. ]
