Silicon photo transistor
KDT5001A
The KDT5001A is high sensitivity silicon photo
transistor which converts light to electrical signal.
This photo transistor is both COB package and
easy to mount.
Dimensions
[Unit : mm]
Features
Higly sensitive photo transistor
Chip On Board package.
High speed response.
Applications
AV Instrumemts
Touch panels for ATM & FA epuiments
Optical counter
Pin Description
①
EMITTER
②
COLECTOR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature*
1
*1.Test Condition : t
≤
3s
[T
A
= 25
Symbol
V
CEO
V
ECO
I
C
P
C
Topr.
Tstg.
Tsol
Rating
30
5
20
75
-5~+50
-20~+80
240
Unit
]
V
V
mA
mW
ELECTRO- OPTICAL CHARACTERISTICS
Description
Dark Current
Photo Current
Symbol
I
CEO
I
PCE
Condition
V
CE
=10V, E
E
=0
V
CE
=5V, E
E
=0.5�½/㎠,
PK
=640㎚
Min.
-
1.2
Typ.
-
-
500~1050
Max.
100
2.4
Unit
nA
mA
nm
nm
Spectral Sensitivity
Peek wavelength
Viewing Angle
Collector-Emitter Saturation Voltage
2
p
1/2
V
R
=0V
20
IC=100
, E
E
=0.5mW/cm
2
,
PK
=640nm
880
40
-
200
deg.
mV
V
CE(SAT)
-
-1-
KODENSHI [ KODENSHI KOREA CORP. ]
