NEW PRODUCT
Silicon photo transistor KDT5001A
Description
The KDT5001A is high sensitivity silicon photo transistor which converts
light to electrical signal.
This photo transistor is both COB package and easy to mount.
Features
- Higly sensitive photo transistor.
- Chip On Board package.
- High speed response.
Application
- AV Instrumemts.
- Touch panels for ATM & FA epuiments.
- Optical counter
Outline Dimensions
Pin Description
①
EMITTER
②
COLECTOR
ELECTRO- OPTICAL CHARACTERISTICS
Description
Dark Current
Photo Current
Spectral Sensitivity
Peek wavelength
Viewing Angle
Collector-Emitter Saturation Voltage
2
p
1/2
[Ta= 25
]
Symbol
I
CEO
I
PCE
Condition
V
CE
=10V, E
E
=0
V
CE
=5V, E
E
=0.5
mW
/
cm
2
PK
=640
nm
Min.
-
1.2
Typ.
-
-
500~1050
Max.
100
2.4
Unit
nA
mA
nm
nm
V
R
=0V
20
IC=100
, E
E
=0.5
mW
/
cm
2
,
PK
=640
nm
-
880
40
-
200
deg.
mV
V
CE(SAT)
1/1
Issued Date : Feb. 2006
KODENSHI [ KODENSHI KOREA CORP. ]
