Infrared Emitting Diodes(GaAIAs)
KBL-1KL3
◆
Typical Characteristics
■Power
dissipation Vs Ambient temperature
■
Radiant intensity Vs Forward current
Power dissipation (P
D
)
Forward current (I
F
)
■Relative
radiant intensity Vs Ambient temperature
■Relative
intensity Vs Wavelength
Relative radiant intensity (Po)
(%)
Ta=25℃
Ambient temperature (Ta)
Radiant intensity (Po)
1
0.1
-20
0
20
40
60
80
100 (℃)
Ambient temperature (Ta)
■Forward
current Vs Forward voltage
■Sensitivity
diagram Vs Angular displacement
Angle (deg.)
Forward current (I
F
)
Forward voltage (V
F
)
KKC-QM-043-2
2/2
Radiant intensity
10
100
80
60
40
20
0
400 500 600 700 800 900 1000 1100(㎚)
Wavelength(λ)
Wavelength(λ
)
Relative intensity(%)
KODENSHI [ KODENSHI KOREA CORP. ]
