Infrared Emitting Diodes(GaAs)
K O D E N S H I
E L - 3 2 5
DIMENSIONS
(Unit : mm)
The EL– 325 is a GaAs IRED mounted in a low profile
clear epoxy package.This IRED is both compact and
easy to mount.
FEATURES
• Ultra compact
• Low profile
• S n a–p in mount is possible
APPLICATIONS
• P h o t o i n t e r r u p t e r s
• Optical equipment
MAXIMUM RATINGS
( T a = ℃2)5
I t e m
S y m b o Rl a t i n g U n i t
R
Reverse voltage
Forward current
Power dissipation
V
5
V
m A
m W
A
F
I
5 0
D
P
F
I
1 0 0
0 . 5
Pulse forward current *
Operating temp.
Storage temp.
1
P
T o p r .
T s t g .
T s o l .
2 5
3 0
2 6 0
8 5
℃
8 5
℃
*
2
Soldering temp.
℃
*1. pulse width tw 100 μsec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
( T a = ℃2 )5
I t e m
Forward voltage
Reverse current
S y m b o l
C o n d i t i o n s
M i n . T y p .
M a x .
U n i t .
F
F
I = 5 0 m A
1 . 6
1 0
V
μA
n m
n m
m W / s r
d e g .
V
R
R
I
V = 5 V
F
I = 5 0 m A
I = 5 0 m A
I = 5 0 m A
9 4 0
5 0
0 . 7
± 5 0
Peak emission wavelength
Spectral bandwidth
λ p
Δ λ
F
3
Radiant intensity *
F
O
P
Half angle
Δ θ
*3. Measured by tester of KODENSHI CORP.
- 1-
KODENSHI [ KODENSHI KOREA CORP. ]
