DP200F
Absolute maximum ratings
Characteristic
(Ta=25
°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-15
-12
-5
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
V
V
V
A
-1
PC
0.5
2
Collector dissipation
W
*
PC
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
-55~150
* : When mounted on 40´ 40´ 0.8mm ceramic substate
Electrical Characteristics
(Ta=25
°C)
Characteristic
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
IC=-50mA, IE=0
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
-15
-12
-5
-
-
-
-
V
V
IC=-1mA, IB=0
-
IE=-50mA, IC=0
-
-
V
VCB=-12V, IE=0
-
-0.1
-0.1
450
-
mA
mA
-
Emitter cut-off current
IEBO
VEB =-5V, IC=0
-
-
hFE1
VCE=-1V, IC=-100mA
VCE=-1V, IC=-2A
IC=-1A, IB=-50mA
IC=-2A, IB=-50mA
IC=-1A, IB=-50mA
VCE=-5V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
200
40
-
-
DC current gain
hFE2
-
-
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
-
-
-0.3
-0.5
-1.2
-
Collector-Emitter saturation voltage
V
-
Base-Emitter saturation voltage
Transition frequency
-
-
V
-
330
9
MHz
pF
Collector output capacitance
Cob
-
-
KST-8013-000
2
KODENSHI [ KODENSHI KOREA CORP. ]
