BC818
NPN Silicon Transistor
Descriptions
•
High current application
•
Switching application
PIN Connection
Features
•
Suitable for AF-Driver stage and low
power output stages
•
Complementary pair with BC808
3
1
2
SOT-23
Ordering Information
Type NO.
BC818
Marking
PA
□ □
① ② ③
①
Device Code
②
hFE Rank
③
Year&Week Code
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
25
5
800
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
V
BE(ON)
V
CE(sat)
I
CBO
h
FE
*
f
T
C
ob
Test Condition
I
C
=1mA, I
B
=0
V
CE
=1V,
I
C
=300mA
Min.
25
-
-
-
100
-
-
Typ. Max.
-
-
-
-
-
100
16
-
1.2
700
100
630
-
-
Unit
V
V
mV
nA
-
MHz
pF
I
C
=500mA, I
B
=50mA
V
CB
=30V, I
E
=0
V
CE
=1V, I
C
=100mA
V
CB
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
* : h
FE
rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KSD-T5C026-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
