BC817F
NPN Silicon Transistor
Descriptions
•
High current application
•
Switching application
PIN Connection
3
Features
•
Suitable for AF-Driver stage and low
power output stages
•
Complementary pair with BC807F
1
2
SOT-23F
Ordering Information
Type NO.
BC817F
Marking
NA
① ② ③
①Device
Code
②hFE
Rank
③Year&Week
Code
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
50
35
5
800
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
V
BE(ON)
V
CE(sat)
I
CBO
h
FE
f
T
C
ob
*
Test Condition
I
C
=1mA, I
E
=0
V
CE
=1V,
I
C
=300mA
Min. Typ. Max.
35
-
-
-
100
-
-
-
-
-
-
-
100
16
-
1.2
700
100
630
-
-
Unit
V
V
mV
nA
-
MHz
pF
I
C
=500mA, I
B
=50mA
V
CB
=25V, I
E
=0
V
CE
=1V, I
C
=100mA
V
CB
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
* : h
FE
rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KSD-T5C051-001
1