BC807
PNP Silicon Transistor
Descriptions
•
High current application
•
Switching application
PIN Connection
Features
•
Suitable for AF-Driver stage and
low power output stages
•
Complementary Pair with BC817
C
B
E
SOT-23
Ordering Information
Type NO.
BC807
Marking
LA
□ □
① ② ③
①
Device Code
②
hFE Rank
③
Year&Week Code
Package Code0
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-50
-35
-5
-800
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter
voltage
breakdown
(Ta=25°C)
Symbol
BV
CEO
V
BE(ON)
V
CE(sat)
I
CBO
h
FE
*
f
T
C
ob
Test Condition
I
C
=-1mA, I
B
=0
V
CE
=-1V, I
C
=-300mA
I
C
=-500mA, I
B
=-50mA
V
CB
=-25V, I
E
=0
V
CE
=-1V, I
C
=-100mA
V
CB
=-5V, I
E
=10mA
f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-35
-
-
-
100
-
-
-
-
-
-
-
100
16
-
-1.2
-700
-100
630
-
-
Unit
V
V
mV
nA
-
MHz
pF
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
* : h
FE
rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
KSD-T5C023-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
