2SA1981S
PNP Silicon Transistor
Description
•
Audio power amplifier application
PIN Connection
Features
•
High h
FE
: h
FE
=100~320
•
Complementary pair with 2SC5344S
C
B
E
Ordering Information
Type No.
2SA1981S
Marking
EA
□ □
① ②
③
SOT-23
Package Code
SOT-23
①
Device Code
②
hFE Rank
③
Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* Package mounted on 99.5% alumina 10×8×0.6mm
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Ratings
-35
-30
-5
-800
350
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
f
T
Cob
Test Condition
I
C
=-500μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
I
C
=-500mA, I
B
=-20mA
V
CE
=-5V, I
E
=10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-35
-30
-5
-
-
100
-
-
-
-
-
-
-
-
-
-
120
19
-
-
-
-0.1
-0.1
320
-0.5
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
*
:
h
FE
rank / O : 100~200, Y : 160~320
KSD-T5C021-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
