Semiconductor
2SA1979
PNP Silicon Transistor
Description
•
Medium power amplifier
PIN Connection
E
Features
•
Large collector current : I
CMax
=-500mA
•
Suitable for low-Voltage operation because of
its low saturation voltage
•
Complementary pair with 2SC5342
B
C
E
B
C
TO-92
Package Code
TO-92
Ordering Information
Type NO.
2SA1979
Marking
A1979
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-40
-32
-5
-500
500
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-40V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-20mA
V
CB
=-6V, I
E
=0, f=1MHz
Min. Typ. Max.
-40
-32
-5
-
-
70
-
-
-
-
-
-
-
-
-
-
200
7.5
-
-
-
-0.1
-0.1
240
-0.25
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
*
: h
FE
rank / O : 70~140, Y : 120~240
KSD-T0A028-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
