KI SEMICONDUCTOR
Features
Diff used Junc ti on
Low Forward Volt age Drop
High Curr ent Capabil ity
UL Recognized File # E165989
KBJ4A
THRU
KBJ4M
4 Amp
GLASS PASSIVATED
BRIDGE RECTIFIERS
50 to 1000 Volts
KB J
P
A
D
E
B
+
•
•
•
•
•
•
Maximum Ratings
Device
Marking
Operating Junction Temperature: -5 5°C to + 150
°C
Storage Temperature: -55°C to +150°C
Catalog
Number
K BJ4005
KB J401
KB J 402
KB J404
KB J406
KB J408
KB J410
KBJ4A
KBJ4B
KBJ4D
KBJ4G
KBJ4J
KBJ4K
KBJ4M
Maximum
Re
current
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
O
F
N
~ ~
I
-
C
G
H
J
L
M
K
DIMENSIONS
Electrical Characteristics @ 25
°C
Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I t Rating for fusing
2
I
F(AV)
I
FSM
V
F
4.0A
150A
1.0V
T
C
=
100°C
8.3ms, half sine
I
FM
= 2.0A per
element;
T
A
= 25°C*
I
R
10µA T
A
= 25°C
500µA T
C
= 100°C
93A
2
S (t<8.35ms)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
INCHES
MIN
MAX
.976
.992
.579
.602
.154
.161
.173
.189
.134
.150
.122
.134
.130
.146
.035
.043
.059
.075
.677
.700
.287
.303
.098
.114
.024
.031
.366
.381
.118X45
°
.122
.134
MM
MIN
MAX
24.80
25.20
14.70
15.30
3.90
4.10
4.40
4.80
3.40
3.80
3.10
3.40
3.30
3.70
0.90
1.10
1.50
1.90
17.20
17.80
7.30
7.70
2.50
2.90
0.60
0.80
9.30
9.70
3.0X45
°
3.10
3.40
NOTE
It
2
KI SEMICONDUCTOR