NPN S I L I C O N T RA N S I S T O R
K I
SEMICONDUCTOR
█
APPLICATIONS
.
C3198
General Purpose And Switching Applications.
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………400mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
EBO
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current………………………………………150mA
Ib——Base Current………………………………………………50mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Cob
NF
100
100
70
25
100
0.1
80
2.0
1.0
3.5
10
0.25
1.0
700
nA
nA
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
Emitter
Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
V
V
MHz
pF
dB
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0,f=1MHz
V
CE
=6V, I
C
=100μA
f=1KHz,Rg=10KΩ
Output Capacitance
Noise Figure
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h
FE
Classification
O
Y
120—240
GR
200—400
BL
350—700
70—140