RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD CHARACTERISTICS
mA
1000
BAV17---BAV21
FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS
AMBIENT TEMPERATURE
A
.3
100
T
J
=100
I
O
,
I
F
.2
DC CURRENT I
F
10
I
F
1
T
J
=25
.1
CURRENT (RECTIF.) I
F(AV)
.1
1
.01
0
.2
.4
.6
.8
1.0V
0
30
60
90
120
T
A
150
℃
V
F
FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS
AMBIENT TEMPERATURE
mW
500
FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000
I
R
(T
J
)
400
P
tot
I
R
(25
)
100
300
10
200
100
1
V
R
=50V
1
0
100
T
A
200
℃
0.1
0
100
T
J
200
℃
FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS
FORWARD CURRENT
FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE
100
2
1.8
T
J
=25
r
50
F
1.6
1.4
20
10
5
C
J
1.2
1
.8
.6
.4
2
1
1
2
5
10
20
50
.2
0
.1 .2 .5
1
2
5
10 20 50 100V
I
F
100
mA
V
R
Document Number 0268008
KI
SEMICONDUCTOR CO.
2.
KISEMICONDUCTOR [ Kwang Myoung I.S. CO.,LTD ]
