KI
FEATURES
SEMICONDUCTOR
BAT46
VOLTAGE RANGE: 100 V
CURRENT: 0.15 A
SMALL SIGNAL SCHOTTKY DIODES
For general purpos e applications
Thes e diodes features very low turn-on voltage
and fas t s witching. Thes e devices are protected
by a PN junction guard ring agains t exces s ive
voltage, s uch as electros tatic dis charges
Thes e diodes is ls o available in the SOD - 123 cas e
with type des ignation BAT46W and in the
MiniMELF cas e wyht type des ignations LL46
DO - 35(GLASS)
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS
Parameter
Repetitive peak reverse voltage
Forw ard continuius current
@ tamb=25
<=0.5,T
A
=25
Symbol
V
R
I
F
I
FRM
I
FSM
P
tot
R
θJA
T
J
T
A
T
STG
Value
100.0
150
1)
350
1)
750
1)
150
1)
0.3
1)
125
c-65
---+ 125
c-65
---+ 150
UNITS
V
mA
mA
mA
mW
／
m W
Repetitive peak f orw ard current @ tp<1s,
Surge f orw ard current
Pow er dissipation
1)
@ tp<10ms,T
A
=25
@ T
A
=65
Thermal resistance juntion to ambient air
Junction tenperature
Ambient operating temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS
Parameter
Reverse breakdow n voltage
Symbol
V
R
Test Condition
I
R
= 100
A(puls ed)
V
R
= 1.5V
V
R
= 1.5V,T
j
=60
V
R
= 10V
Min.
100.0
Typ.
Max.
0.5
5.0
0.8
7.5
2.0
15.0
5.0
20.0
0.25
0.45
1.0
UNITS
V
Leakage current
pulse test tp<300
s,
<2%
I
R
V
R
= 10V,T
j
=60
V
R
= 50V
V
R
= 50V,T
j
=60
V
R
= 75V
V
R
= 75V,T
j
=60
I
F
= 0.1m A
a
A
Forw ard voltage
pulse test tp<300
s,
<2%
V
F
I
F
= 10m A
I
F
= 250m A
V
R
= 0V,f=1MHz
V
R
= 1V,f=1MHz
10
6
V
Junction capacitance
Thermal resistance junction to ambient air
C
J
R
θJA
pF
300
1)
/W
1) Valid prov ided that leads at a distance of 4mm f rom case are kept at ambient temperature
Document Number 0265008
KI
SEMICONDUCTOR
1.
KISEMICONDUCTOR [ Kwang Myoung I.S. CO.,LTD ]
