KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
BAS21_A_C_S LT1
SWITCHING DIODE
SOT-23
FEATURES
Power dissipation
1. 0
P
D:
225
mW (Tamb=25℃)
T
J
, T
stg
: -55℃ to +150℃
0. 95
Unit: mm
BAS21LT1
Marking: JS
BAS21ALT1
Marking: JS2
BAS21CLT1
Marking: JS3
BAS21SLT1
Marking: JS4
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
voltage
leakage current
Symbol
V
(BR)
I
R
V
F
C
D
unless otherwise specified)
Test
conditions
MIN
250
1
1000
1250
5
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=200V
I
F
=100mA
I
F
=200mA
0. 4
Forward Current
200 m A
I
F:
Reverse Voltage
250
V
V
R
:
Operating and storage junction temperature range
2. 4
1. 3
2. 9
1. 9
0. 95
µ
A
mV
Diode
capacitance
V
R
=0V, f=1MHz
pF
nS
Reverse recovery time
t
rr
50
KISEMICONDUCTOR [ Kwang Myoung I.S. CO.,LTD ]
