PNP S I L I C O N T R A N S I S T O R
K I
SEMICONDUCTOR
█
APPLICATIONS
The H733 is designed for driver stage of AF amplifier
And low speed switching.
A733
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………-60V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-150mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)
V
BE(ON)
I
CBO
I
EBO
f
T
Cob
-60
-50
-5
90
-0.5
600
-0.3
-0.8
-100
-100
180
4.5
V
V
V
V
V
nA
nA
MHz
pF
I
C
=-100μA,
I
C
=-10mA,
I
E
=0
I
B
=0
I
E
=-10μA,I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-1mA
V
CB
=-60V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-10mA
V
CB
=-10V,
I
E
=0
,
f=1MHz
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
█
h
FE
Classification
R
90—180
Q
135—270
P
200—400
K
300—600