KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
1SS187
SWITCHING DIODE
SOT-23
FEATURES
Power dissipation
P
D
:
150
mW(Tamb=25℃)
1. 0
Forward Current
I
F
:
100 m A
Reverse Voltage
80
V
V
R
:
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
Marking
D3
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
voltage
leakage current
Symbol
V
(BR)
I
R
V
F
C
D
unless otherwise specified)
Test
conditions
I
R
= 100
µ
A
V
R
=80V
I
F
=100mA
V
R
=0V
f=1MHz
MIN
80
0.5
1.2
4
MAX
UNIT
V
0. 4
µ
A
V
Diode
capacitance
pF
nS
Reverse recovery time
t
rr
4