KI
FEATURES
SEMICONDUCTOR
1S2076A
REVERSE VOLTAGE
:
60
V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
DO-35(GLASS)
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25
am bient temperature unless otherwise specified.
MAXIMUM RATINGS
1S2076A
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resist.load
@
T
A
=
25
and f 50Hz
Forw ard surge current @ t<1s and T
J
=
25
Pow er dissipation
@ T
A
=
25
Junction temperature
Storage temperature range
UNITS
V
V
mA
A
mW
V
R
V
RM
I
AV
I
FSM
P
tot
T
J
T
STG
MIN
-
-
60
70
150
1.0
250
175
-55 --- +175
1)
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage at I
F
=10mA
Leakage current
@ V
R
=30V
V
F
I
R
TYP
-
-
MAX
0.8
0.1
UNITS
V
μ
A
Capacitance
@ V
F
=V
R
=1V,f=1MHz
C
J
-
-
3.0
pF
Reverse recovery time
from I
F
=I
R
=10mA
to I
rr
=1mA
t
rr
-
-
8.0
ns
Document Number 0268032
KI
SEMICONDUCTOR
1.